|
週次 |
日期 |
單元主題 |
|
第1-1週 |
9/15 |
A. Catalytic growth of one-dimensional nanomaterials (a) Chemical vapor deposition method |
|
第1-2週 |
9/11 |
A. Catalytic growth of one-dimensional nanomaterials (b) Wire, tube, belt, sheet, etc. |
|
第2-1週 |
9/22 |
A. Catalytic growth of one-dimensional nanomaterials (a) Wire, tube, belt, sheet, etc. (b) Growth mechanism |
|
第2-2週 |
9/25 |
A. Catalytic growth of one-dimensional nanomaterials
(c) Growth mechanism |
|
第3-1週 |
10/2 |
B. Band theory and spectroscopic characterization (a)
Semiconductors |
|
第3-2週 |
10/6 |
B. Band theory and spectroscopic characterization (b)
Exciton and phonon |
|
第4-1週 |
10/9 |
B. Band theory and spectroscopic characterization (b)
Exciton and phonon (c) Quantum confinement |
|
第4-2週 |
10/13 |
B. Band theory and spectroscopic characterization (c)
Quantum confinement |
|
第5-1週 |
10/16 |
C. Nanotube/nanowire field-effect transistors (NT/NW-FET) (a)
Photolithographic techniques |
|
第5-2週 |
10/20 |
C. Nanotube/nanowire field-effect transistors (NT/NW-FET) (b) Fabrication of NT/NW-FET |
|
第6-1週 |
10/23 |
C. Nanotube/nanowire field-effect transistors (NT/NW-FET) (b) Fabrication of NT/NW-FET (c) Electric transport (I-Vsd and I-Vg curves) |
|
第6-2週 |
10/27 |
C. Nanotube/nanowire field-effect transistors (NT/NW-FET) (c) Electric transport (I-Vsd and I-Vg curves) |
|
第7-1週 |
10/30 |
C. Nanotube/nanowire field-effect transistors (NT/NW-FET) (d) Band bending |
|
第8-1週 |
11/6 |
C. Nanotube/nanowire field-effect transistors (NT/NW-FET) (e) Scattering potential (f) Light on NT/NW-FET |
|
第8-2週 |
11/10 |
C. Nanotube/nanowire field-effect transistors (NT/NW-FET) (g) Hysteresis effect |
|
第9-1週 |
11/13 |
C. Nanotube/nanowire field-effect transistors (NT/NW-FET) (h) Electrostatic and chemical potentials |
|
第9-2週 |
11/17 |
C. Nanotube/nanowire field-effect transistors (NT/NW-FET) (i) Debye-Hückel screening length |
|
第10-1週 |
11/20 |
D. Neuron cells
(a) Ion channels |
|
第10-2週 |
11/24 |
D. Neuron cells (b) Membrane potential |
|
第11-1週 |
11/27 |
D. Neuron cells (b) Membrane potential (c) Action potential |
|
第11-2週 |
12/1 |
D. Neuron cells (c) Action potential |
|
第12-1週 |
12/4 |
D. Neuron cells (d) Hodgkin-Huxley model |
|
第12-2週 |
12/8 |
D. Neuron cells (e) Goldman equation |
|
第13-1週 |
12/11 |
D. Neuron cells (e) Goldman equation (f) Synaptic transmission |
|
第13-2週 |
05/16 |
D. Neuron cells (f) Synaptic transmission |
|
第14-1週 |
12/15 |
D. Neuron cells (g) Vesicle and neurotransmitter |
|
第14-2週 |
12/18 |
D. Neuron cells (h) Exocytosis and endocytosis |
|
第15-1週 |
12/22 |
E. Nanoscale biosensors
(a) NT/NW-FET
1. Surface modification |
|
第15-2週 |
12/25 |
E. Nanoscale biosensors
(a) NT/NW-FET 2. Sensitivity and selectivity |
|
第16-1週 |
12/29 |
E. Nanoscale biosensors
(a) NT/NW-FET 3. Langmuir binding model 4. Piont-contact and sheet-contact models |
|
第16-2週 |
1/5 |
E. Nanoscale biosensors
(a) NT/NW-FET 5. Extracellular analyte detection |
|
第17-1週 |
1/8 |
E. Nanoscale biosensors (b) Dielectrophoretic force to manipulate cells |
|
第17-2週 |
1/12 |
E. Nanoscale biosensors (c) Fluorescence resonance energy transfer (FRET) 1.
Förster model |
|
第18-1週 |
1/15 |
E. Nanoscale biosensors (c) Fluorescence resonance energy transfer (FRET) 1.
Förster model (d) Miscellaneous methods |
|
第18-2週 |
1/19 |
E. Nanoscale biosensors (d) Miscellaneous methods |